Publications

This publication list was last updated December 2008. A more recent list of publications is available on my CV, which is available by request.

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S. P. Beckman, Xinjie Wang, Karin M. Rabe, and David Vanderbilt. Ideal barriers to polarization reversal and domain-wall motion in strained ferroelectric thin films. Under Review. (2009).

Amir Natan, Ayelet Benjamini, Doron Naveh, Leeor Kronik, Murilo L. Tiago, S. P. Beckman, and James R. Chelikowsky. Real-space pseudopotential method for first principles calculations of general periodic and partially periodic systems. Physical Review B. V78, P075109. (2008).

A. T. Zayak, S. P. Beckman, Murilo L. Tiago, P. Entel, and James R. Chelikowsky. Switchable Ni-Mn-Ga Heuslter nanocrystals. Journal of Applied Physics. V104, p074307. (2008).

S. P. Beckman and James R. Chelikowsky. The structure and properties of vacancies in Si nano-crystals calculated by real space pseudopotential methods. Physica B: Physics of Condensed Matter. V401, p537-540. (2007).

S. P. Beckman and D. C. Chrzan. Reconstruction energies of partial dislocations in cubic semiconductors. Physical Review B. In Press. (2007).

S. P. Beckman and Jiaxin Han and James R. Chelikowsky. Quantum confinement effects in Ge [110] nanowires. Physical Review B. V74, p165314. (2006).

C. Kisielowski, B. Freitag, X. Xu, S. P. Beckman, and D. C. Chrzan. Sub Angstrom imaging of dislocation core structures: How well are experiments comparable with theory? Philosophical Magazine. V86, p4575-4588. (2006).

S. P. Beckman and D. C. Chrzan. Structure and energy of the partial dislocation cores in GaAs. Physica Status Solidi (b). V243, p2122-2132. (2006).

X. Xu, S. P. Beckman, P. Specht, E. R. Weber, D. C. Chrzan, R. P. Erni, I. Arslan, N. Browning, A. Bleloch, and C. Kisielowski. Distrotion and Segregation in a Dislocation Core Region at Atomic Resolution. Physical Review Letters. V95, p145501. (2005).

S. P. Beckman and D. C. Chrzan. The Structure of Intrinsic Stacking Faults in GaAs. Proceedings of The 27th. International Conference on the Physics of Semiconductors, July 2004. ed. Jos\`{e} Men\`{e}ndez and Chris G. Van de Walle. American Institute of Physics: New York, p 145 (2005).

S. P. Beckman and D. C. Chrzan. Dislocation cores and their electronic states: partial dislocations in GaAs. Physica B: Physics of Condensed Matter. V340-342, p.1001-1004. (2003).

S. P. Beckman and D. C. Chrzan. Structure of glide-set 90 partial dislocation cores in diamond cubic semiconductors. Physica B: Physics of Condensed Matter. V340-342, p.990-995. (2003).

X. Xu, S. P. Beckman, P. Specht, D. C. Chrzan, E. R. Weber, and C. Kisielowski. The effect of residual lens aberrations on the determination of column positions around partial dislocations in GaAs. Microscopy and Microanalysis. V9(Suppl 2), p.498-499CD. (2003).

S. P. Beckman and D. C. Chrzan. Structure of dislocation core in GaAs. Multiscale Phenomena in Materials - Experiments and Modeling Related to Mechanical Behavior. Symposium (Mater. Res. Soc. Symposium Proceedings Vol.779). Mater. Res. Soc. Warrendale, PA p. 51-60 (2003).

S. P. Beckman, X. Xu, P. Specht, E. R. Weber, C. Kisielowski, and D. C. Chrzan. Ab initio predictions of the structure of glide set dislocations cores in GaAs. Journal of Physics-Condensed Matter. V14, p.12673. (2002).

Jing Zheng, S. P. Beckman, J. N. Gray, and M. Akinc. X-ray tomography study on green state joining of silicon carbide using polymer precursors. Journal of the American Ceramic Society. V84, p.1961-7. (2001).

S. Wendt, J. Gray, and S. Beckman. Energy dispersive measurements of anisotropic diffraction mottling effects. Seventh Annual Review of Progress in Quantitative Nondestructive Evaluation, Ames, IA, USA 16-21 July 2000. AIP. American Institute of Physics Conference Proceedings, no.557A, p.514-20. (2001).

T. R. Watkins, S. P. Beckman, and C. R. Hubbard. Residual Strain Measurement in Thermal Barrier Coatings. Advances in X-Ray Analysis, V40 CDROM. Edited by J.V. Gilfrich et al. ICDD, Newton Square, PA p.524-33. (1998).